Wei Hong

Southeast University, China

Wei Hong received the B.S. degree from the University of Information Engineering, Zhengzhou, China, in 1982, and the M.S. and PhD degrees from Southeast University, Nanjing, China, in 1985 and 1988, respectively, all in radio engineering.

He is currently a professor of the School of Information Science and Engineering, Southeast University. In 1993, 1995, 1996, 1997 and 1998, he was a short-term visiting scholar with the University of California at Berkeley and at Santa Cruz, respectively. He has been engaged in numerical methods for electromagnetic problems, millimeter wave and terahertz theory and technology, antennas, RF technology for wireless communications etc. He has authored and co-authored over 400 technical publications and 5 books. He twice awarded the National Natural Prizes of China, once awarded the National Science and Technology Progress Award, four times awarded the first-class Science and Technology Progress Prizes issued by the Ministry of Education of China and Jiangsu Province Government, and 2021 IEEE MTT-S Microwave Prize etc.

Dr. Hong is a Fellow of IEEE, Fellow of CIE, the vice presidents of the CIE Microwave Society and Antenna Society, and was an elected IEEE MTT-S AdCom Member during 2014-2016, served as the Associate Editor of the IEEE Trans. on MTT from 2007 to 2010.

Speech Title: Research Progress in Terahertz Devices, Chips, and Systems

Abstract: In this talk, the recent research progress in terahertz (THz) devices, chips and systems in the State Key Laboratory of Millimeter Waves (SKLMMW) of Southeast University and cooperative enterprises are reviewed. 

Tianchun Ye

University of Chinese Academy of Sciences, China

Tianchun Ye, born in 1965, he is an IEEE Fellow and a graduate of the Department of Electronic Engineering at Fudan University. He previously served as the Director of the Institute of Microelectronics, Chinese Academy of Sciences, and led a National Science and Technology Major Project. He has received three National Technology Invention Awards and four First-Class Invention Awards at the ministerial and provincial levels. Leading his team in over a decade of persistent research, he proposed a series of innovative technical methodologies and achieved multiple major inventions at the forefront of international standards. These technologies have been adopted by leading enterprises both in China and abroad for the mass production of cutting-edge products, making pioneering contributions to the self-reliance and development of China's advanced integrated circuit processes.

Speech Title: Technology Innovation in Integrated Circuit Transistor Process

Abstract: Integrated circuit process evolution is the fundamental basis for the development of modern information and artificial intelligence technologies. Over the past few decades, China has been making continuous efforts in this field. Starting from the 90nm node, integrated circuit CMOS transistors have demanded the development of new processes, materials, and structures to overcome key bottlenecks in PPA scaling by generations. The Institute of Microelectronics of the Chinese Academy of Sciences (IMECAS) has long been engaged in the research and development of innovative transistor technologies. They have made a great breakthrough on technical challenges such as precise gate control, transistor performance modulation, and structural scaling in both 22nm high-k/metal gate-last, 14nm FinFET, and up-to-date GAA transistor processes, established a technical system with comprehensive independent intellectual property rights, and successfully applied it to domestic and international cutting-edge integrated circuit products.

Mohammad SAMIZADEH NIKOO

Nanyang Technological University, Singapore

Mohammad Samizadeh Nikoo is a Nanyang Assistant Professor in the School of Electrical and Electronic Engineering (EEE) at Nanyang Technological University (NTU), Singapore. He is the founding director of the Innovative Electronic & Electromagnetic Device Laboratory (i–Lab). He received his PhD from EPFL, Switzerland, in 2022. In the same year, he joined the Integrated Systems Laboratory at ETH Zurich as a research scientist, before beginning his tenure-track appointment at NTU in 2023. Dr. Samizadeh Nikoo is a Fellow of the National Research Foundation, Singapore (Class of 2024). He has received several distinctions and awards and currently serves as the lead principal investigator (PI) on multiple national research projects. His research focuses on developing a new generation of high-frequency semiconductor components for future information technologies. 

Speech Title: High-Performance Electronic Metadevices for Millimeter-Wave and Terahertz Integrated Circuits

Abstract: Approaching the terahertz band from the electronics side is of great technological importance, with the promise of advancing next-generation wireless communication systems toward 6G and beyond. However, inherent limitations of high-speed transistors, the primary building blocks of monolithically integrated high-frequency circuits, have hindered the realization of high-performance terahertz electronics. 

Electrical metastructures offer an alternative paradigm, in which modulation of the conductivity of a semiconducting layer controls collective quasi-electrostatic responses within a lumped structure, enabling electronic functionalities such as switching, mixing, and parametric amplification. Compared with conventional transistors, electrical metastructures enable ultra-low contact resistances, leading to record-high switching cutoff frequencies well beyond 10 THz in a compact device platform, referred to as electronic metadevices.

The first part of this talk highlights recent advances in III-nitride electronic metadevices operating up to 1 THz and introduces a new generation based on quasi-one-dimensional electrical metastructures with enhanced electrical performance. We present theoretical insights into the collective responses governing the operation of electronic metadevices and elucidate their ultimate performance limits. In the second part, we introduce a metastructure-based paradigm for directly realizing high-performance millimeter-wave and terahertz components with ultracompact footprints, demonstrated the compatibility of metatronic devices with commercial silicon processes. 

Eleni MAKARONA

Institute of Nanoscience and Nanotechnology, NCSR “Demokritos”, Greece

Dr. Eleni Makarona is Director of Research at the Institute of Nanoscience and Nanotechnology, NCSR "Demokritos", Greece. She holds a PhD in Physics from Brown University (USA), where she trained under Prof. Arto V. Nurmikko on III-nitride optoelectronics, supported by a competitive graduate fellowship awarded to the top 10% of international applicants.

Her research spans two parallel axes maintained continuously for nearly two decades: silicon photonic biosensors, and chemically synthesized metal oxide nanostructures. Her work on photonic sensors spans applications in biodiagnostics, food safety and quality assurance, and environmental monitoring. Moreover, she is co-inventor of the Broadband Mach-Zehnder Interferometer and Broadband Young Interferometer detection architectures — novel sensing principles that progressed from fundamental invention through patents to international prototype deployment. In metal oxide nanostructures, her work follows a material-first philosophy in which device concepts emerge from deep understanding of defect-driven mechanisms, spanning optoelectronics, sensing, energy harvesting, and hardware security.

She has led or coordinated competitive research programs across European and national frameworks, and has delivered invited presentations at international conferences. She was awarded the Greek L'Oréal–UNESCO Award For Young Women in Science in 2010.

Speech Title: Scalable Functional Devices Based on Chemically Synthesized ZnO Nanostructures: Bridging Synthesis and Device Functionality

Abstract: Low-cost, chemically synthesized metal oxide nanostructures offer a compelling pathway toward scalable, cost-efficient, and sustainable electronic and sensing devices. However, building functional devices from such nanostructures requires more than mastering fabrication and compatibility with standard micro/nanofabrication processes — it demands a deeper understanding of the underlying physical mechanisms governing the material itself and of how these translate into, and ultimately dictate, device performance.

This talk presents a device-oriented framework in which zinc oxide (ZnO) serves as a representative material platform. Central to this framework is the systematic investigation of defect-driven mechanisms emerging from the growth environment — mechanisms that, contrary to conventional device design assumptions, are shown to be the dominant determinants of functional behavior rather than structural geometry or intentional doping alone.

This perspective enables the development of functional systems across diverse application domains. Representative implementations span ZnO-based homojunction devices, sensing platforms exploiting defect-mediated mechanisms, energy harvesting systems, and hardware security elements. Collectively, these demonstrate a coherent, fabrication-compatible, and scalable pathway for functional device realization from chemically synthesized nanostructures — one that redefines material imperfection not as a limitation to be suppressed, but as a design parameter to be understood, controlled, and exploited. 

Qianqian Huang

Peking University, China

Prof. Qianqian Huang is a Full Professor with Tenure in the School of Integrated Circuits at Peking University. Her research interests are in the area of emerging low-power devices for diverse applications, in particular tunnel devices and ferroelectric devices. She has authored/co-authored more than 100 technical papers in international journals and conferences and held more than 70 granted patents. She is the recipient of Chang Jiang Scholar (2023), the Chinese Young Women in Science Award (2022), Xplorer Prize (2020), IEEE EDS Early Career Award (2019), etc.

Speech Title: Si Hybrid Tunnel FET-CMOS Foundry Platform for Ultra-low-Power Circuit Applications

Abstract: This work demonstrates the recent progress on 55 nm Tunnel FET(TFET)-CMOS hybrid integration platform and its ultra-low-power circuit applications. By integrating the bulk-Si-based novel dopant-segregated TFET (DS-TFET) with large ION and record high ION/IOFF ratio, as well as the novel laminated isolation technology into the CMOS baseline technology, energy-efficient TFET-CMOS hybrid circuits are experimentally realized. 1Kbit TFET-Gated-Ground SRAM is implemented and demonstrated in MCU always-on domain showing sub-100nA ultra-low leakage, and a 6T hybrid TFET-CMOS SRAM-based digital CIM accelerator is designed showing high energy efficiency without performance or area penalty. Moreover, a novel DS-TFET-like device (AsyFET) with ultralow off-state leakage current and bidirectional conductivity is further demonstrated as the write transistor of 2T0C eDRAM, leading to the long retention of 3.9 s in 55nm technology node. The TFET-CMOS hybrid platform of this work demonstrates the great potential for cutting-edge power-dieting applications.

Shurong Dong

Zhejiang University, China

Qiu Shi Distinguished Professor and director of Sensing and Micro-Integration Institute of Zhejiang University, Chief scientist of special project of the Ministry of Science and Technology, Military Strategic Expert Electronic field Committee, National Brain-Computer Interface Standards Committee, International PI of Cambridge University, One of the top 2% global scientists. He mainly engages in research on brain-machine interfaces and smart medical MEMS microsystem technologies. He has published 229 SCI papers, has an H-index of 48, and 6,809 citations on Google, 131 invention patents.

Speech Title: Multimodal Integrated Neural Electrode Based on Flexible Electronics

Abstract: Neural monitoring is a fundamental technology in neuroscience and neurological diseases. Multimodal neural monitoring can better observe neural and brain activity from multiple perspectives. How to integrate various observation techniques in a small area and meet the needs of different application scenarios is currently a challenge in the field of brain and neuroscience. This article introduces our team's recent work from implanted electrodes to wearable non-invasive electrodes, focusing on multimodal integrated neural electrode technology based on flexible electronics,  so as to provide a reference for scientific research.

Chao Ma

Xi’an Jiaotong University,China

Dr. Chao Ma is currently an Associate Professor and Ph.D. Supervisor at the School of Microelectronics, Xi’an Jiaotong University, and was selected for the XJTU Young Talent Support Plan. He received his Ph.D. degree in Electrical Engineering from Xi’an Jiaotong University in 2021, during which he was a visiting scholar at the University of California, Los Angeles (UCLA). After graduation, he conducted postdoctoral research at the School of Electronics, Peking University, as a “Boya” Postdoctoral Fellow. His research interests lie in high-performance pressure sensing and low-dimensional device integration, with a focus on: (1) AI-enabled tactile dexterous hands; (2) novel-principle sensing devices and electronic circuits, including (but not limited to) non-Hermitian electronic circuits; and (3) low-dimensional device integration for in-sensor computing. In recent years, he has published papers in leading journals, including Nature Electronics (front cover), Nature Communications, ACS Nano, and IEEE Electron Device Letters. He also holds five granted Chinese invention patents.

Speech Title: Contact-dominated, field-enhanced flexible pressure sensors toward high-performance robotic skin

Abstract: Motivated by the vision of functionalizing diverse human orientated future intelligent technologies with the ability to accurately and robustly detect various mechanical stimuli and interactions, intense efforts have been devoted to designing high-performance flexible pressure sensors, in particular for typical capacitive ones that feature low power consumption to support long-term continuous detection/monitoring. However, capacitive pressure sensors essentially suffer from limitations in terms of sensitivity, linearity, and working range. Here, we report a design strategy based on contact-dominated localized electric-displacement-field-enhanced capacitance and contact mechanics to dramatically improve the sensing response and linearity of capacitive sensors over a broad pressure range. We present a novel construction of integrated sensors by employing our contact-dominated design with floating-gate low-dimensional semiconductor transistors that enables the sensor to fully exploit the transistor’s on/off ratio range with enhanced sensing performance at a low operating voltage. Moreover, our sensor-equipped robotic arm demonstrates the potential to evaluate physical properties of fluids, and precisely and dynamically control to handle manipulation tasks. The proposed strategy can provide general design guidance for high-performance capacitive sensor, which would have a significant impact on human orientated future intelligent technologies.